www.ptreview.co.uk
05
'25
Written on Modified on
onsemi Unveils Top-Cool SiC Package for High-Power Systems
onsemi’s new EliteSiC MOSFETs in T2PAK top-cool packaging improve thermal efficiency, reliability and design flexibility for EVs, solar and energy-storage applications.
www.onsemi.com
Top-cool package delivers superior thermal performance, reliability, and design flexibility for EVs, solar infrastructure, and energy storage systems
High-power applications such as electric vehicles, solar inverters, EV chargers and industrial power systems are increasingly constrained by thermal limits. To address these challenges, onsemi has introduced its EliteSiC MOSFET portfolio in the industry-standard T2PAK top-cool package. The offering enhances thermal performance, system reliability and design flexibility for demanding automotive and industrial environments.
The first 650 V and 950 V EliteSiC MOSFETs in T2PAK format are already shipping to lead customers, with additional devices scheduled for release through Q4 2025 and beyond. By expanding the EliteSiC family into top-cool packaging, onsemi provides a new option for designers seeking compact, efficient solutions for high-voltage platforms.
Differentiation Through Thermal Efficiency and System-Level Design Benefits
Rising power requirements make thermal management a critical engineering priority. Conventional PCB-based cooling paths often limit heat extraction, forcing designers to compromise between switching performance and thermal headroom. The T2PAK top-cool package directly couples heat into the system’s cooling structure, bypassing PCB limitations and enabling lower operating temperatures, higher power density and extended component lifetime. These advantages help reduce system complexity and accelerate time to market.
Auggie Djekic, Vice President and Head of the SiC Division at onsemi, emphasized that designers increasingly need solutions combining efficiency and reliability, and the EliteSiC technology paired with T2PAK packaging enables next-generation system performance.
How the Top-Cool T2PAK Architecture Improves Performance
The T2PAK design minimizes thermal resistance between the MOSFET and the application heatsink, supporting a wide range of Rds(on) values from 12 mΩ to 60 mΩ. Its architecture achieves faster switching speeds, lower energy loss and improved thermal handling while retaining the benefits of TO-247 and D2PAK formats without their typical limitations.
High-power applications such as electric vehicles, solar inverters, EV chargers and industrial power systems are increasingly constrained by thermal limits. To address these challenges, onsemi has introduced its EliteSiC MOSFET portfolio in the industry-standard T2PAK top-cool package. The offering enhances thermal performance, system reliability and design flexibility for demanding automotive and industrial environments.
The first 650 V and 950 V EliteSiC MOSFETs in T2PAK format are already shipping to lead customers, with additional devices scheduled for release through Q4 2025 and beyond. By expanding the EliteSiC family into top-cool packaging, onsemi provides a new option for designers seeking compact, efficient solutions for high-voltage platforms.
Differentiation Through Thermal Efficiency and System-Level Design Benefits
Rising power requirements make thermal management a critical engineering priority. Conventional PCB-based cooling paths often limit heat extraction, forcing designers to compromise between switching performance and thermal headroom. The T2PAK top-cool package directly couples heat into the system’s cooling structure, bypassing PCB limitations and enabling lower operating temperatures, higher power density and extended component lifetime. These advantages help reduce system complexity and accelerate time to market.
Auggie Djekic, Vice President and Head of the SiC Division at onsemi, emphasized that designers increasingly need solutions combining efficiency and reliability, and the EliteSiC technology paired with T2PAK packaging enables next-generation system performance.
How the Top-Cool T2PAK Architecture Improves Performance
The T2PAK design minimizes thermal resistance between the MOSFET and the application heatsink, supporting a wide range of Rds(on) values from 12 mΩ to 60 mΩ. Its architecture achieves faster switching speeds, lower energy loss and improved thermal handling while retaining the benefits of TO-247 and D2PAK formats without their typical limitations.
Technical highlights include:
- Direct thermal path to the heatsink for superior cooling and reduced junction temperatures
- Low stray inductance supporting faster, more efficient switching
- Compact footprint enabling higher power density in constrained designs
When combined with the EliteSiC figure of merit, the T2PAK top-cool package helps engineers achieve cooler, more compact and more energy-efficient next-generation power systems.
